Electronic Properties of Nonstoichiometric PbSe Quantum Dots from First Principles | |
Gai YQ(盖艳琴) ; Peng HW(彭浩为) ; Li JB(李京波) | |
刊名 | journal of physical chemistry c |
2009 | |
卷号 | 113期号:52页码:21506-21511 |
关键词 | MULTIPLE EXCITON GENERATION AUGMENTED-WAVE METHOD 1ST-PRINCIPLES CALCULATIONS COLLOIDAL PBSE SURFACE PSEUDOPOTENTIALS NANOCRYSTALS RELAXATION INTERBAND |
通讯作者 | li, jb, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. e-mail address: jbli@semi.ac.cn |
合作状况 | 其它 |
学科主题 | 半导体物理 |
收录类别 | SCI |
资助信息 | one-hundred talent plan of the chinese academy of sciences;national science fund for distinguished young scholars 60925016;national high technology research and development program of china 2009aa034101 |
语种 | 英语 |
公开日期 | 2010-04-04 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/10192] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Gai YQ,Peng HW,Li JB. Electronic Properties of Nonstoichiometric PbSe Quantum Dots from First Principles[J]. journal of physical chemistry c,2009,113(52):21506-21511. |
APA | Gai YQ,Peng HW,&Li JB.(2009).Electronic Properties of Nonstoichiometric PbSe Quantum Dots from First Principles.journal of physical chemistry c,113(52),21506-21511. |
MLA | Gai YQ,et al."Electronic Properties of Nonstoichiometric PbSe Quantum Dots from First Principles".journal of physical chemistry c 113.52(2009):21506-21511. |
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