Selective growth of absorptive InGaAsP layer on InP corrugation for a buried grating structure

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	Selective growth of absorptive InGaAsP layer on InP corrugation for a buried grating structure
	Pan JQ
刊名	applied physics letters
	2007
卷号	90 期号:1 页码:art.no.011117
关键词	VAPOR-PHASE EPITAXY
ISSN号	issn: 0003-6951
通讯作者	feng, w, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wfeng@semi.ac.cn
中文摘要	a buried grating structure with a selectively grown absorptive ingaasp layer was fabricated and characterized by scanning electron microscopy and photoluminescence. the inp corrugation was etched by introducing a sio2 mask that was more stable than a conventional photoresist mask during the etching process. moreover, the corrugation was efficaciously preserved during the selective growth of the absorptive layer with the sio2 mask. though this absorptive layer was only selectively grown on the concave region of the corrugation, it has a high intensity around the peak wavelength in comparison with that of ingaalas multiple quantum well, which was grown on the buried grating structure.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9714]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Pan JQ. Selective growth of absorptive InGaAsP layer on InP corrugation for a buried grating structure[J]. applied physics letters,2007,90(1):art.no.011117.
APA	Pan JQ.(2007).Selective growth of absorptive InGaAsP layer on InP corrugation for a buried grating structure.applied physics letters,90(1),art.no.011117.
MLA	Pan JQ."Selective growth of absorptive InGaAsP layer on InP corrugation for a buried grating structure".applied physics letters 90.1(2007):art.no.011117.