Hole Rashba effect and g-factor in InP nanowires

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Hole Rashba effect and g-factor in InP nanowires
	Zhang XW ; Xia JB
刊名	journal of physics d-applied physics
	2007
卷号	40 期号:2 页码:541-546
关键词	SEMICONDUCTOR NANOWIRES
ISSN号	issn: 0022-3727
通讯作者	zhang, xw, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china.
中文摘要	the hole rashba effect and g-factor in inp nanowires in the presence of electric and magnetic fields which bring spin splitting are investigated theoretically in the framework of eight-band effective-mass envelop function theory, by expanding the lateral wave function in bessel functions. it is well known that the electron rashba coefficient increases nearly linearly with the electric field. as the rashba spin splitting is zero at zero k(z) ( the wave vector along the wire direction), the electron g-factor at k(z) = 0 changes little with the electric field. while we find that as the electric field increases, the hole rashba coefficient increases at first, then decreases. it is noticed that the hole rashba coefficient is zero at a critical electric field. the hole g-factor at k(z) = 0 changes obviously with the electric field.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9694]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang XW,Xia JB. Hole Rashba effect and g-factor in InP nanowires[J]. journal of physics d-applied physics,2007,40(2):541-546.
APA	Zhang XW,&Xia JB.(2007).Hole Rashba effect and g-factor in InP nanowires.journal of physics d-applied physics,40(2),541-546.
MLA	Zhang XW,et al."Hole Rashba effect and g-factor in InP nanowires".journal of physics d-applied physics 40.2(2007):541-546.