Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE

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	Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE
	Pan JQ
刊名	journal of physics d-applied physics
	2007
卷号	40 期号:2 页码:361-365
关键词	BANDGAP ENERGY CONTROL
ISSN号	issn: 0022-3727
通讯作者	feng, w, chinese acad sci, state key lab integrated optoelect, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wfeng@semi.ac.cn
中文摘要	fabrication of ingaalas mqw buried heterostructure (bh) lasers by narrow stripe selective movpe is demonstrated in this paper. high quality ingaalas mqws were first grown by narrow stripe selective movpe without any etching process and assessed by analysing the cross sections and pl spectrums of the ingaalas mqws. furthermore, bhs were fabricated for the ingaalas mqw lasers by a developed unselective regrowth method, instead of conventional selective regrowth. the ingaalas mqw bh lasers exhibit good device characteristics, with a high internal differential quantum efficiency of 85% and a low internal loss of 6.7 cm(-1). meanwhile, narrow divergence angles of the far field pattern are obtained for the fabricated lasers.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9692]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Pan JQ. Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE[J]. journal of physics d-applied physics,2007,40(2):361-365.
APA	Pan JQ.(2007).Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE.journal of physics d-applied physics,40(2),361-365.
MLA	Pan JQ."Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE".journal of physics d-applied physics 40.2(2007):361-365.