Unusual carrier thermalization in a dilute GaAs1-xNx alloy

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	Unusual carrier thermalization in a dilute GaAs1-xNx alloy
	Tan PH
刊名	applied physics letters
	2007
卷号	90 期号:6 页码:art.no.061905
关键词	PHOTOLUMINESCENCE
ISSN号	issn: 0003-6951
通讯作者	tan, ph, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: pt290@cam.ac.uk ; yong_zhang@nrel.gov
中文摘要	photoluminescence (pl) properties of the e-0, e-0+delta(0), and e+ bands in an x=0.62% gaas1-xnx alloy were investigated in detail, including their peak position, linewidth, and line shape dependences on the excitation energy, excitation power, and temperature, using micro-pl. the hot electrons within the e+ band are found to exhibit highly unusual thermalization, which results in a large blueshift in its pl peak energy by >2k(b)t, suggesting peculiar density of states and carrier dynamics of the e+ band.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9652]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Tan PH. Unusual carrier thermalization in a dilute GaAs1-xNx alloy[J]. applied physics letters,2007,90(6):art.no.061905.
APA	Tan PH.(2007).Unusual carrier thermalization in a dilute GaAs1-xNx alloy.applied physics letters,90(6),art.no.061905.
MLA	Tan PH."Unusual carrier thermalization in a dilute GaAs1-xNx alloy".applied physics letters 90.6(2007):art.no.061905.