Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation

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	Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation
	Zhang JG ; Wang XX ; Cheng BW ; Yu JZ ; Wang QM ; Hau J ; Ding L ; Ge WK
刊名	applied physics letters
	2007
卷号	90 期号:8 页码:art.no.081101
关键词	DOPED CRYSTALLINE SILICON
ISSN号	issn: 0003-6951
通讯作者	zhang, jg, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: jianguochang@yahoo.com
中文摘要	enhanced near-infrared photoluminescence (pl) from sulfur-related isoelectronic luminescent centers in silicon was observed from thermally quenched sulfur-implanted silicon in which additional copper or silver ions had been coimplanted. the pl from the sulfur and copper coimplanted silicon peaked between 70 and 100 k and persisted to 260 k. this result strongly supports the original conjecture from the optical detection of magnetic resonance studies that the strong pl from sulfur-doped silicon comes from s-cu isoelectronic complexes [frens , phys. rev. b 46, 12316 (1992); mason , ibid. 58, 7007 (1998).]. (c) 2007 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9628]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang JG,Wang XX,Cheng BW,et al. Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation[J]. applied physics letters,2007,90(8):art.no.081101.
APA	Zhang JG.,Wang XX.,Cheng BW.,Yu JZ.,Wang QM.,...&Ge WK.(2007).Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation.applied physics letters,90(8),art.no.081101.
MLA	Zhang JG,et al."Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation".applied physics letters 90.8(2007):art.no.081101.