Study on mechanical properties of GaN epitaxy films grown on sapphire by MOCVD

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	Study on mechanical properties of GaN epitaxy films grown on sapphire by MOCVD
	Wei TB (Wei Tongbo) ; Wang JX (Wang Junxi) ; Li JM (Li Jinmin) ; Liu Z (Liu Zhe) ; Duan RF (Duan Ruifei)
刊名	rare metal materials and engineering
	2007
卷号	36 期号:3 页码:416-419
关键词	GaN
ISSN号	issn: 1002-185x
通讯作者	wei, tb, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: tbwei@mail.semi.ac.cn
中文摘要	gan epitaxy films were grown on (0001) oriented sapphire substrate by metal-organic vapor deposition(mocvd). afm and sem were used to analyze the surface morphology of gan films. hardness and critical load of gan films were measured by an nano-indentation tester, friction coefficient by reciprocating umt-2mt tribometer. it is found that the surface of gan film is smooth and the epitaxial growth mechanism is in two-dimension mode, gan epitaxy films also belong to ultra-hardness materials, whose hardness is 22.1 mpa and elastic modulus is 299.5 gpa. adhesion strength of epitaxial gan to sapphire is high, and critical load reaches 1.6 n. friction coefficient against gcr15 ball is steadily close to 0.13, while gan films turns to be broken rapidly by using si3n4 ceramic ball as counterpart.
学科主题	半导体材料
收录类别	SCI
语种	中文
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9532]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wei TB ,Wang JX ,Li JM ,et al. Study on mechanical properties of GaN epitaxy films grown on sapphire by MOCVD[J]. rare metal materials and engineering,2007,36(3):416-419.
APA	Wei TB ,Wang JX ,Li JM ,Liu Z ,&Duan RF .(2007).Study on mechanical properties of GaN epitaxy films grown on sapphire by MOCVD.rare metal materials and engineering,36(3),416-419.
MLA	Wei TB ,et al."Study on mechanical properties of GaN epitaxy films grown on sapphire by MOCVD".rare metal materials and engineering 36.3(2007):416-419.