Fabrication of ultra-low density and long-wavelength emission InAs quantum dots

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	Fabrication of ultra-low density and long-wavelength emission InAs quantum dots
	Huang, SS (Huang, Shesong) ; Niu, ZC (Niu, Zhichuan) ; Ni, HQ (Ni, Haiqiao) ; Xiong, YH (Xiong, Yonghua) ; Zhan, F (Zhan, Feng) ; Fang, ZD (Fang, Zhidan) ; Xia, JB (Xia, Jianbai)
刊名	journal of crystal growth
	2007
卷号	301 期号:0 页码:751-754
关键词	long wavelength
ISSN号	issn: 0022-0248
通讯作者	niu, zc, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zcniu@red.semi.ac.cn
中文摘要	by optimizing the molecular beam epitaxy growth conditions of self-organized inas/gaas quantum dots (qds), we obtained an ultra-low density system of inas qds (4 x 10(6)cm(-2)). photoluminescence (pl) spectroscopy reveals the emission wavelength at room temperature to be longer than 1300 nm with a gaas capping layer. (c) 2007 elsevier b.v. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9512]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Huang, SS ,Niu, ZC ,Ni, HQ ,et al. Fabrication of ultra-low density and long-wavelength emission InAs quantum dots[J]. journal of crystal growth,2007,301(0):751-754.
APA	Huang, SS .,Niu, ZC .,Ni, HQ .,Xiong, YH .,Zhan, F .,...&Xia, JB .(2007).Fabrication of ultra-low density and long-wavelength emission InAs quantum dots.journal of crystal growth,301(0),751-754.
MLA	Huang, SS ,et al."Fabrication of ultra-low density and long-wavelength emission InAs quantum dots".journal of crystal growth 301.0(2007):751-754.