Spin relaxation dynamics in InAs monolayer and submonolayer

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Spin relaxation dynamics in InAs monolayer and submonolayer
	Sun Z (Sun Zheng) ; Xu ZY (Xu Zhong-Ying) ; Ruan XZ (Ruan Xue-Zhong) ; Ji Y (Ji Yang) ; Sun BQ (Sun Bao-Quan) ; Ni HQ (Ni Hai-Qiao)
刊名	acta physica sinica
	2007
卷号	56 期号:5 页码:2958-2961
关键词	InAs submonolayer
ISSN号	issn: 1000-3290
通讯作者	sun, z, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: sz3288@red.semi.ac.cn
中文摘要	by using time-resolved photoluminescence and time-resolved kerr rotation, we have studied the unique electron spin dynamics in inas monolayer (ml) and submonolayer (sml), which were sandwiched in gaas matrix. under non-resonant excitation, the spin relaxation lifetimes of 3.4 ns and 0.48 ns were observed for 1/3 ml and i ml inas samples, respectively. more interestingly, the spin lifetime of the 1/3 ml inas decreased dramatically under resonant excitation, down to 70 ps, while the spin lifetime of the 1 ml sample did not vary much, changing only from 400 to 340 ps. these interesting results come from the different electron-hole interactions caused by different spatial electron-hole correlation, and they provide a direct evidence of the dominant spin relaxation process, i.e. the bap mechanism. furthermore, these new results may provide a valuable enlightenment in controlling the spin relaxation and in seeking new material systems for spintronics application.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9466]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun Z ,Xu ZY ,Ruan XZ ,et al. Spin relaxation dynamics in InAs monolayer and submonolayer[J]. acta physica sinica,2007,56(5):2958-2961.
APA	Sun Z ,Xu ZY ,Ruan XZ ,Ji Y ,Sun BQ ,&Ni HQ .(2007).Spin relaxation dynamics in InAs monolayer and submonolayer.acta physica sinica,56(5),2958-2961.
MLA	Sun Z ,et al."Spin relaxation dynamics in InAs monolayer and submonolayer".acta physica sinica 56.5(2007):2958-2961.