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	Effects of sputtering power on the properties of ZnO:Ga films deposited by r.f. magnetron-sputtering at low temperature
	Yu, Xuhu[1]; Ma, Jin[1]; Ji, Feng[1]; Wang, Yuheng[1]; Zhang, Xijian[1]; Cheng, Chuanfu[2]; Ma, Honglei[1]
	2005
卷号	274期号:3-4页码:474-479
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6404025
专题	山东师范大学
作者单位	1.[1] Sch. of Physics and Microelectronics, Shandong University, Jinan 250100, China 2.[2] Physics Department, Shandong Normal University, Jinan 250014, China
推荐引用方式 GB/T 7714	Yu, Xuhu[1],Ma, Jin[1],Ji, Feng[1],et al. Effects of sputtering power on the properties of ZnO:Ga films deposited by r.f. magnetron-sputtering at low temperature[J],2005,274(3-4):474-479.
APA	Yu, Xuhu[1].,Ma, Jin[1].,Ji, Feng[1].,Wang, Yuheng[1].,Zhang, Xijian[1].,...&Ma, Honglei[1].(2005).Effects of sputtering power on the properties of ZnO:Ga films deposited by r.f. magnetron-sputtering at low temperature.,274(3-4),474-479.
MLA	Yu, Xuhu[1],et al."Effects of sputtering power on the properties of ZnO:Ga films deposited by r.f. magnetron-sputtering at low temperature".274.3-4(2005):474-479.

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