Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x/GaN multiple quantum wells

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	Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x/GaN multiple quantum wells
	Li JM ; Han X ; Wu JJ ; Liu XL ; Zhu QS ; Wang ZG
刊名	physica e-low-dimensional systems & nanostructures
	2005
卷号	25 期号:4 页码:575-581
关键词	quantum wells
ISSN号	1386-9477
通讯作者	li, jm, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: jiemli@red.semi.ac.cn
中文摘要	a self-consistent calculation of the subband energy levels of n-doped quantum wells is studied. a comparison is made between theoretical results and experimental data. in order to account for the deviations between them, the ground-state electron-electron exchange interactions, the ground-state direct coulomb interactions, the depolarization effect, and the exciton-like effect are considered in the simulations. the agreement between theory and experiment is greatly improved when all these aspects are taken into account. the ground-to-excited-state energy difference increases by 8 mev from its self-consistent value if one considers the depolarization effect and the exciton-like effect only. it appears that the electron-electron exchange interactions account for most of the observed residual blueshift for the infrared intersubband absorbance in alxga1-xn/gan multiple quantum wells. it seems that electrons on the surface of the k-space fermi gas make the main contribution to the electron-electron exchange interactions, while for electrons further inside the fermi gas it is difficult to exchange their positions. (c) 2004 elsevier b.v. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8908]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li JM,Han X,Wu JJ,et al. Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x/GaN multiple quantum wells[J]. physica e-low-dimensional systems & nanostructures,2005,25(4):575-581.
APA	Li JM,Han X,Wu JJ,Liu XL,Zhu QS,&Wang ZG.(2005).Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x/GaN multiple quantum wells.physica e-low-dimensional systems & nanostructures,25(4),575-581.
MLA	Li JM,et al."Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x/GaN multiple quantum wells".physica e-low-dimensional systems & nanostructures 25.4(2005):575-581.