Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature

	Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature
	Liu, Zhi ; Cheng, Buwen ; Hu, Weixuan ; Su, Shaojian ; Li, Chuanbo ; Wang, Qiming
刊名	nanoscale research letters
	2012
卷号	7 页码:1-11
学科主题	光电子学
收录类别	EI
语种	英语
公开日期	2013-05-07
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24033]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Liu, Zhi,Cheng, Buwen,Hu, Weixuan,et al. Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature[J]. nanoscale research letters,2012,7:1-11.
APA	Liu, Zhi,Cheng, Buwen,Hu, Weixuan,Su, Shaojian,Li, Chuanbo,&Wang, Qiming.(2012).Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.nanoscale research letters,7,1-11.
MLA	Liu, Zhi,et al."Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature".nanoscale research letters 7(2012):1-11.