Investigation of Mn-implanted n-Si by low-energy ion beam deposition

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	Investigation of Mn-implanted n-Si by low-energy ion beam deposition
	Yin ZG
刊名	journal of crystal growth
	2005
卷号	273 期号:3-4 页码:458-463
关键词	auger electron spectroscopy
ISSN号	0022-0248
通讯作者	liu, lf, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: lfliu@red.semi.ac.cn
中文摘要	mn ions were implanted to n-type si(0 0 1) single crystal by low-energy ion beam deposition technique with an energy of 1000 ev and a dose of 7.5 x 10(17) cm(-2). the samples were held at room temperature and at 300degreesc during implantation. auger electron spectroscopy depth profiles of samples indicate that the mn ions reach deeper in the sample implanted at 300degreesc than in the sample implanted at room temperature. x-ray diffraction measurements show that the structure of the sample implanted at room temperature is amorphous while that of the sample implanted at 300degreesc is crystallized. there are no new phases found except silicon both in the two samples. atomic force microscopy images of samples indicate that the sample implanted at 300degreesc has island-like humps that cover the sample surface while there is no such kind of characteristic in the sample implanted at room temperature. the magnetic properties of samples were investigated by alternating gradient magnetometer (agm). the sample implanted at 300degreesc shows ferromagnetic behavior at room temperature. (c) 2004 elsevier bn. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8902]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yin ZG. Investigation of Mn-implanted n-Si by low-energy ion beam deposition[J]. journal of crystal growth,2005,273(3-4):458-463.
APA	Yin ZG.(2005).Investigation of Mn-implanted n-Si by low-energy ion beam deposition.journal of crystal growth,273(3-4),458-463.
MLA	Yin ZG."Investigation of Mn-implanted n-Si by low-energy ion beam deposition".journal of crystal growth 273.3-4(2005):458-463.