Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

	Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium
	He, W ; Lu, S.L ; Jiang, D.S ; Dong, J.R ; Tackeuchi, A ; Yang, H
刊名	journal of applied physics
	2012
卷号	112 期号:2 页码:023509
学科主题	光电子学
收录类别	EI
语种	英语
公开日期	2013-05-07
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23964]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	He, W,Lu, S.L,Jiang, D.S,et al. Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium[J]. journal of applied physics,2012,112(2):023509.
APA	He, W,Lu, S.L,Jiang, D.S,Dong, J.R,Tackeuchi, A,&Yang, H.(2012).Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium.journal of applied physics,112(2),023509.
MLA	He, W,et al."Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium".journal of applied physics 112.2(2012):023509.