Investigation of cavity mode and excitonic transition in an InGaAs/GaAs/AlGaAs vertical-cavity surface emitting laser structure by variable-temperature micro-photoluminescence, reflectance and photomodulated reflectance

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	Investigation of cavity mode and excitonic transition in an InGaAs/GaAs/AlGaAs vertical-cavity surface emitting laser structure by variable-temperature micro-photoluminescence, reflectance and photomodulated reflectance
	Yu, J.L ; Chen, Y.H ; Jiang, C.Y ; Zhang, H.Y
刊名	journal of physics: conference series
	2012
卷号	400 期号:part 1 页码:012088
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2013-05-13
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24058]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Yu, J.L,Chen, Y.H,Jiang, C.Y,et al. Investigation of cavity mode and excitonic transition in an InGaAs/GaAs/AlGaAs vertical-cavity surface emitting laser structure by variable-temperature micro-photoluminescence, reflectance and photomodulated reflectance[J]. journal of physics: conference series,2012,400(part 1):012088.
APA	Yu, J.L,Chen, Y.H,Jiang, C.Y,&Zhang, H.Y.(2012).Investigation of cavity mode and excitonic transition in an InGaAs/GaAs/AlGaAs vertical-cavity surface emitting laser structure by variable-temperature micro-photoluminescence, reflectance and photomodulated reflectance.journal of physics: conference series,400(part 1),012088.
MLA	Yu, J.L,et al."Investigation of cavity mode and excitonic transition in an InGaAs/GaAs/AlGaAs vertical-cavity surface emitting laser structure by variable-temperature micro-photoluminescence, reflectance and photomodulated reflectance".journal of physics: conference series 400.part 1(2012):012088.