Simulation of proton transportation process in GaN | |
Zhang, Ming-Lan ; Zhang, Xiao-Qian ; Yang, Rui-Xia ; Di, Zhao-Ting | |
刊名 | yuanzineng kexue jishu/atomic energy science and technology |
2012 | |
卷号 | 46期号:6页码:648-651 |
学科主题 | 半导体材料 |
收录类别 | EI |
语种 | 英语 |
公开日期 | 2013-05-07 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/24031] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Zhang, Ming-Lan,Zhang, Xiao-Qian,Yang, Rui-Xia,et al. Simulation of proton transportation process in GaN[J]. yuanzineng kexue jishu/atomic energy science and technology,2012,46(6):648-651. |
APA | Zhang, Ming-Lan,Zhang, Xiao-Qian,Yang, Rui-Xia,&Di, Zhao-Ting.(2012).Simulation of proton transportation process in GaN.yuanzineng kexue jishu/atomic energy science and technology,46(6),648-651. |
MLA | Zhang, Ming-Lan,et al."Simulation of proton transportation process in GaN".yuanzineng kexue jishu/atomic energy science and technology 46.6(2012):648-651. |
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