Effect of misfit dislocation originated from strained layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells

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	Effect of misfit dislocation originated from strained layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells
	Li DB
刊名	chinese physics letters
	2005
卷号	22 期号:4 页码:971-974
关键词	OPTICAL-PROPERTIES
ISSN号	0256-307x
通讯作者	lu, w, jilin univ, coll mat sci & engn, dept mat sci, changchun 130012, peoples r china. 电子邮箱地址: lw@chen.ac.cn
中文摘要	in-x ga1-xn/gan multiple quantum well (mqw) samples with strain-layer thickness lager/less than the critical one are investigated by temperature-dependent photoluminescence and transmission electron microscopy, and double crystal x-ray diffraction. for the sample with the strained-layer thickness greater than the critical thickness, we observe a high density of threading dislocations generated at the mqw layers and extended to the cap layer. these dislocations result from relaxation of the strain layer when its thickness is beyond the critical thickness. for the sample with the strained-layer thickness greater than the critical thickness, temperature-dependent photoluminescence measurements give evidence that dislocations generated from the mqw layers due to strain relaxation are main reason of the poor photoluminescence property, and the dominating status change of the main peak with increasing temperature is attributed to the change of the radiative recombination from the areas including dislocations to the ones excluding dislocations.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8806]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li DB. Effect of misfit dislocation originated from strained layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells[J]. chinese physics letters,2005,22(4):971-974.
APA	Li DB.(2005).Effect of misfit dislocation originated from strained layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells.chinese physics letters,22(4),971-974.
MLA	Li DB."Effect of misfit dislocation originated from strained layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells".chinese physics letters 22.4(2005):971-974.