Space-charge-limited currents in GaN Schottky diodes

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	Space-charge-limited currents in GaN Schottky diodes
	Zhao DG
刊名	solid-state electronics
	2005
卷号	49 期号:5 页码:847-852
关键词	GaN
ISSN号	0038-1101
通讯作者	shen, xm, tongji univ, inst semicond & informat technol, 1239 siping rd, shanghai 200092, peoples r china. 电子邮箱地址: xmshen@mail.tongji.edu.cn
中文摘要	unusual dark current voltage (i-v) characteristics were observed in gan schottky diodes. i-v characteristics of the gan schottky diodes were measured down to the magnitude of 10(-14) a. although these schottky diodes were clearly rectifying, their i-v characteristics were non-ideal which can be judged from the non-linearity in the semi-logarithmic plots. careful analysis of the forward bias i-v characteristics on log-log scale indicates space-charge-limited current (sclc) conduction dominates the current transport in these gan schottky diodes. the concentration of the deep trapping centers was estimated to be higher than 10(15) cm(-3). in the deep level transient spectra (dlts) measurements for the gan schottky diodes, deep defect levels around 0.20 ev below the bottom of the conduction band were identified, which may act as the trapping centers. the concentration of the deep centers obtained from the dlts data is about 5 x 10(15) cm(-3). sclc measurements may be used to probe the properties of deep levels in wide bandgap gan-algan compound semiconductors, as is the case with insulators in the presence of trapping centers. (c) 2005 elsevier ltd. all rights reserved.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8792]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao DG. Space-charge-limited currents in GaN Schottky diodes[J]. solid-state electronics,2005,49(5):847-852.
APA	Zhao DG.(2005).Space-charge-limited currents in GaN Schottky diodes.solid-state electronics,49(5),847-852.
MLA	Zhao DG."Space-charge-limited currents in GaN Schottky diodes".solid-state electronics 49.5(2005):847-852.