Fabrication of arrayed waveguide grating based on SOI material
Fang, Q ; Li, F ; Liu, YL
刊名journal of infrared and millimeter waves
2005
卷号24期号:2页码:143-146
关键词multiplexer/demultiplexer
ISSN号1001-9014
通讯作者fang, q, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要an arrayed waveguide grating based on soi material was fabricated by inductive coupled plasma (icp) etching technology. the central wavelength of the device was designed at 1.5509 mu m and the channel spacing was 200 ghz. comparing with the values of the design, the differences of the central wavelength and the channel spacing in the test were 0.28 nm and 0.02 nm, respectively. the adjacent channel crosstalk was about 10 db, and the uniformity of the five channels' insertion loss was only 0.7 db. the results show that the device can be used as a demultiplexer.
学科主题光电子学
收录类别SCI
语种中文
公开日期2010-03-17
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/8782]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Fang, Q,Li, F,Liu, YL. Fabrication of arrayed waveguide grating based on SOI material[J]. journal of infrared and millimeter waves,2005,24(2):143-146.
APA Fang, Q,Li, F,&Liu, YL.(2005).Fabrication of arrayed waveguide grating based on SOI material.journal of infrared and millimeter waves,24(2),143-146.
MLA Fang, Q,et al."Fabrication of arrayed waveguide grating based on SOI material".journal of infrared and millimeter waves 24.2(2005):143-146.
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