Characterization of silicon carbide thin films and their use in colour sensor

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	Characterization of silicon carbide thin films and their use in colour sensor
	Zhang S ; Raniero L ; Fortunato E ; Liao X ; Hu Z ; Ferreira I ; Aguas H ; Ramos AR ; Alves E ; Martins R
刊名	solar energy materials and solar cells
	2005
卷号	87 期号:1-4 页码:343-348
关键词	thin film materials & devices
ISSN号	0927-0248
通讯作者	zhang, s, univ nova lisboa, fac ciencias & tecnol, dept ciencia mat, campus caparica, p-2829516 caparica, portugal. 电子邮箱地址: sz@uninova.pt
中文摘要	a series of hydrogenated amorphous silicon carbide (a-si1-xcx:h) films were prepared by plasma-enhanced chemical vapour deposition (pecvd) using a gas mixture of silane, methane, and hydrogen as the reactive source. the previous results show that a high excitation frequency, together with a high hydrogen dilution ratio of the reactive gases, allow an easier incorporation of the carbon atoms into the silicon-rich a-si1-xcx:h film, widen the valence controllability. the data show that films with optical gaps ranging from about 1.9 to 3.6 ev could be produced. in this work the influence of the hydrogen dilution ratio of the reactive gases on the a-si1-xcx:h film properties was investigated. the microstuctural and photoelectronic properties of the silicon carbide films were characterized by rutherford backscattering spectrometry (rbs), elastic recoil detection analysis (erda), and ft-ir spectrometry. the results show that a higher hydrogen dilution ratio enhances the incorporation of silicon atoms in the amorphous carbon matrix for carbon-rich a-si1-xcx:h films. one pin structure was prepared by using the a-si1-xcx:h film as the intrinsic layer. the light spectral response shows that this structure fits the requirement for the top junction of colour sensor. (c) 2004 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8718]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang S,Raniero L,Fortunato E,et al. Characterization of silicon carbide thin films and their use in colour sensor[J]. solar energy materials and solar cells,2005,87(1-4):343-348.
APA	Zhang S.,Raniero L.,Fortunato E.,Liao X.,Hu Z.,...&Martins R.(2005).Characterization of silicon carbide thin films and their use in colour sensor.solar energy materials and solar cells,87(1-4),343-348.
MLA	Zhang S,et al."Characterization of silicon carbide thin films and their use in colour sensor".solar energy materials and solar cells 87.1-4(2005):343-348.