Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate

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	Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate
	Zhao Q ; Zhang HZ ; Xu XY ; Wang Z ; Xu J ; Yu DP ; Li GH ; Su FH
刊名	applied physics letters
	2005
卷号	86 期号:19 页码:art.no.193101
关键词	FIELD-EMISSION PROPERTIES
ISSN号	0003-6951
通讯作者	yu, dp, peking univ, sch phys, electron microscopy lab, beijing 100871, peoples r china. 电子邮箱地址: yudp@pku.edu.cn
中文摘要	highly ordered aln nanowire arrays were synthesized via a simple physical vapor deposition method on sapphire substrate. the nanowires have an extremely sharp tip < 10 nm, with the average length around 3 mu m. raman spectroscopy analysis on the aln nanowire arrays revealed that the lifetime of the phonons is shorter than that in bulk aln. the transmission spectra of the aln nanowires showed a blueshift similar to 0.27 ev at the absorption edge with that of the bulk aln, which is closely related to the small size of the nanowires. (c) 2005 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8696]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao Q,Zhang HZ,Xu XY,et al. Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate[J]. applied physics letters,2005,86(19):art.no.193101.
APA	Zhao Q.,Zhang HZ.,Xu XY.,Wang Z.,Xu J.,...&Su FH.(2005).Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate.applied physics letters,86(19),art.no.193101.
MLA	Zhao Q,et al."Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate".applied physics letters 86.19(2005):art.no.193101.