Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition | |
Chen CL ; Chen NF ; Liu LF ; Wu JL ; Liu ZK ; Yang SY ; Chai CL | |
刊名 | journal of crystal growth
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2005 | |
卷号 | 279期号:3-4页码:272-275 |
关键词 | X-ray diffraction |
ISSN号 | 0022-0248 |
通讯作者 | chen, cl, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: clchen@red.semi.ac.cn |
中文摘要 | the ga1-xmnxsb samples were fabricated by the implantation of mn ions into gasb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. auger electron spectroscopy depth profile of the ga1-xmnxsb samples showed that the mn ions were successfully implanted into gasb substrate. clear double-crystal x-ray diffraction patterns of the ga1-xmnxsb samples indicate that the ga1-xmnxsb epilayers have the zinc-blende structure without detectable second phase. magnetic hysteresis-loop of the ga1-xmnxsb epilayers were obtained at room temperature (293 k) with alternating gradient magnetometry. (c) 2005 elsevier b.v. all rights reserved. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/8686] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Chen CL,Chen NF,Liu LF,et al. Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition[J]. journal of crystal growth,2005,279(3-4):272-275. |
APA | Chen CL.,Chen NF.,Liu LF.,Wu JL.,Liu ZK.,...&Chai CL.(2005).Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition.journal of crystal growth,279(3-4),272-275. |
MLA | Chen CL,et al."Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition".journal of crystal growth 279.3-4(2005):272-275. |
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