Computer simulation of a-Si : H/mu c-Si : H diphasic silicon solar cells

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Computer simulation of a-Si : H/mu c-Si : H diphasic silicon solar cells
	Hao HY ; Kong GL ; Zeng XB ; Xu Y ; Diao HW ; Liao XB
刊名	acta physica sinica
	2005
卷号	54 期号:7 页码:3370-3374
关键词	diphasic silicon films
ISSN号	1000-3290
通讯作者	hao, hy, chinese acad sci, inst semicond, state lab surface phys, beijing 100083, peoples r china.
中文摘要	based on our experimental research on diphasic silicon films, the parameters such as absorption coefficient, mobility lifetime product and bandgap were estimated by means of effective-medium theory. and then computer simulation of a-si: h/mu c-si: h diphasic thin film solar cells was performed. it was shown that the more crystalline fraction in the diphasic silicon films, the higher short circuit density, the lower open-circuit voltage and the lower efficiency. from the spectral response, we can see that the response in long wave region was improved significantly with increasing crystalline fraction in the silicon films. taking lambertian back refraction into account, the diphasic silicon films with 40%-50% crystalline fraction was considered to be the best intrinsic layer for the bottom solar cell in micromorph tandem.
学科主题	半导体材料
收录类别	SCI
语种	中文
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8666]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Hao HY,Kong GL,Zeng XB,et al. Computer simulation of a-Si : H/mu c-Si : H diphasic silicon solar cells[J]. acta physica sinica,2005,54(7):3370-3374.
APA	Hao HY,Kong GL,Zeng XB,Xu Y,Diao HW,&Liao XB.(2005).Computer simulation of a-Si : H/mu c-Si : H diphasic silicon solar cells.acta physica sinica,54(7),3370-3374.
MLA	Hao HY,et al."Computer simulation of a-Si : H/mu c-Si : H diphasic silicon solar cells".acta physica sinica 54.7(2005):3370-3374.