Optical properties and exciton localization in GaNas/GaAs

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Optical properties and exciton localization in GaNas/GaAs
	Tan PH
刊名	journal of infrared and millimeter waves
	2005
卷号	24 期号:3 页码:185-188
关键词	GaNAs
ISSN号	1001-9014
通讯作者	luo, xd, nantong univ, sch sci, jiangsu provincial key lab asic design, nantong 226007, peoples r china.
中文摘要	ganas/gaas single quantum wells (sqws) and dilute ganas bulk grown by molecular beam epitaxy(mbe) were studied by photoluminescence (pl), selectively-excited pl, and time-resolved pl. exciton localization and delocalization were investigated in detail. under short pulse laser excitation, the delocalization exciton emission was revealed in ganas/gaas sqws. it exhibits quite different optical properties from n-related localized states. in dilute ganas bulk, a transition of alloy band related recombination was observed by measuring the pl dependence on temperature and excitation intensity and time-resolved pl, as well. this alloy-related transition presents intrinsic optical properties. these results are very important for realizing the abnomal features of iii-v-n semiconductors.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8654]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Tan PH. Optical properties and exciton localization in GaNas/GaAs[J]. journal of infrared and millimeter waves,2005,24(3):185-188.
APA	Tan PH.(2005).Optical properties and exciton localization in GaNas/GaAs.journal of infrared and millimeter waves,24(3),185-188.
MLA	Tan PH."Optical properties and exciton localization in GaNas/GaAs".journal of infrared and millimeter waves 24.3(2005):185-188.