Frequency dependence of junction capacitance of GaN p-i-n UV detectors

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	Frequency dependence of junction capacitance of GaN p-i-n UV detectors
	Zhao DG
刊名	solid-state electronics
	2005
卷号	49 期号:7 页码:1135-1139
关键词	capacitance-frequency characteristics
ISSN号	0038-1101
通讯作者	fang, jx, chinese acad sci, shanghai inst tech phys, state key labs transducer technol, yutian rd 500, shanghai 200083, peoples r china. 电子邮箱地址: jxfang@mail.sitp.ac.cn
中文摘要	in this paper frequency dependence of small-signal capacitance of p-i-n uv detectors, which were fabricated on gan grown on sapphire substrate by metalorganic chemical vapor deposition, has been studied. the schibli-milnes model was used to analyze the capacitance-frequency characteristics. according to high frequency c-v measurements, the deep level mean concentration is about 2.98 x 10(20) cm(-3). the deep level is caused by the un-ionised mg dopant. the calculated mg activation energy is 260 mev and the hole thermal capture cross section of the deep level is about 2.73 x 10(-22) cm(2). the applicability of the schibli-milnes model is also discussed when the concentration of deep levels exceeds that of the heavily doped n-side. it is concluded that the analytic expression of the schibli-milnes model can still be used to describe the capacitance-frequency characteristics of gan p-i-n uv detectors in good agreement with experiment. (c) 2005 elsevier ltd. all rights reserved.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8618]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao DG. Frequency dependence of junction capacitance of GaN p-i-n UV detectors[J]. solid-state electronics,2005,49(7):1135-1139.
APA	Zhao DG.(2005).Frequency dependence of junction capacitance of GaN p-i-n UV detectors.solid-state electronics,49(7),1135-1139.
MLA	Zhao DG."Frequency dependence of junction capacitance of GaN p-i-n UV detectors".solid-state electronics 49.7(2005):1135-1139.