Quantum-dot growth simulation on periodic stress of substrate

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	Quantum-dot growth simulation on periodic stress of substrate
	Xu B
刊名	journal of chemical physics
	2005
卷号	123 期号:9 页码:art.no.094708
关键词	KINETIC MONTE-CARLO
ISSN号	0021-9606
通讯作者	zhao, c, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: czhao@semi.ac.cn ; yhchen@red.semi.ac.cn
中文摘要	inas quantum dots (qds) are grown on the cleaved edge of an inxga1-xas/gaas supperlattice experimentally and a good linear alignment of these qds on the surface of an inxga1-xas layer has been realized. the modulation effects of periodic strain on the substrate are investigated theoretically using a kinetic monte carlo method. our results show that a good alignment of qds can be achieved when the strain energy reaches 2% of the atomic binding energy. the simulation results are in excellent qualitative agreement with our experiments. (c) 2005 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8542]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B. Quantum-dot growth simulation on periodic stress of substrate[J]. journal of chemical physics,2005,123(9):art.no.094708.
APA	Xu B.(2005).Quantum-dot growth simulation on periodic stress of substrate.journal of chemical physics,123(9),art.no.094708.
MLA	Xu B."Quantum-dot growth simulation on periodic stress of substrate".journal of chemical physics 123.9(2005):art.no.094708.