Phase Change Characteristics of SiO2 Doped Sb2Te3 Materials for Phase Change Memory Application

	Phase Change Characteristics of SiO2 Doped Sb2Te3 Materials for Phase Change Memory Application
	Zhu, M ; Wu, LC ; Rao, F ; song, zt(重点实验室） ; Peng, C ; Li, XL ; Yao, DN ; Xi, W ; Feng, SL(重点实验室）
刊名	ELECTROCHEMICAL AND SOLID STATE LETTERS
	2011
卷号	14 期号:10 页码:H404-H407
关键词	Electrochemistry Materials Science Multidisciplinary
ISSN号	1099-0062
学科主题	Electrochemistry; Materials Science
收录类别	SCI
原文出处	10.1149/1.3610229
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115516]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Zhu, M,Wu, LC,Rao, F,et al. Phase Change Characteristics of SiO2 Doped Sb2Te3 Materials for Phase Change Memory Application[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS,2011,14(10):H404-H407.
APA	Zhu, M.,Wu, LC.,Rao, F.,song, zt.,Peng, C.,...&Feng, SL.(2011).Phase Change Characteristics of SiO2 Doped Sb2Te3 Materials for Phase Change Memory Application.ELECTROCHEMICAL AND SOLID STATE LETTERS,14(10),H404-H407.
MLA	Zhu, M,et al."Phase Change Characteristics of SiO2 Doped Sb2Te3 Materials for Phase Change Memory Application".ELECTROCHEMICAL AND SOLID STATE LETTERS 14.10(2011):H404-H407.