RESET Current Reduction for Phase Change Memory Based on Standard 0.13-mu m CMOS Technology

	RESET Current Reduction for Phase Change Memory Based on Standard 0.13-mu m CMOS Technology
	Chen, YF ; song, zt(重点实验室） ; Chen, XG ; Liu, B(重点实验室） ; Feng, GM ; Xu, C ; Wang, LY ; Zhong, M ; Wan, XD ; Wu, GP ; Xie, ZF ; Yang, ZY ; Chen, BM
刊名	INTERNATIONAL WORKSHOP ON AUTOMOBILE, POWER AND ENERGY ENGINEERING
	2011
卷号	16 页码:-
关键词	Energy & Fuels Transportation Science & Technology
ISSN号	1877-7058
学科主题	Energy & Fuels; Transportation
收录类别	SCI
原文出处	10.1016/j.proeng.2011.08.1102
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115499]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Chen, YF,song, zt,Chen, XG,et al. RESET Current Reduction for Phase Change Memory Based on Standard 0.13-mu m CMOS Technology[J]. INTERNATIONAL WORKSHOP ON AUTOMOBILE, POWER AND ENERGY ENGINEERING,2011,16:-.
APA	Chen, YF.,song, zt.,Chen, XG.,Liu, B.,Feng, GM.,...&Chen, BM.(2011).RESET Current Reduction for Phase Change Memory Based on Standard 0.13-mu m CMOS Technology.INTERNATIONAL WORKSHOP ON AUTOMOBILE, POWER AND ENERGY ENGINEERING,16,-.
MLA	Chen, YF,et al."RESET Current Reduction for Phase Change Memory Based on Standard 0.13-mu m CMOS Technology".INTERNATIONAL WORKSHOP ON AUTOMOBILE, POWER AND ENERGY ENGINEERING 16(2011):-.