Si3.5Sb2Te3 Phase Change Material for Low-Power Phase Change Memory Application

	Si3.5Sb2Te3 Phase Change Material for Low-Power Phase Change Memory Application
	Ren, K ; Rao, F ; song, zt(重点实验室） ; Wu, LC ; Zhou, XL ; Xia, MJ ; Liu, B(重点实验室） ; Feng, SL(重点实验室） ; Xi, W ; Yao, DN ; Chen, BM
刊名	CHINESE PHYSICS LETTERS
	2010
卷号	27 期号:10 页码:108101
关键词	Physics Multidisciplinary
ISSN号	0256-307X
学科主题	Physics
收录类别	SCI
原文出处	10.1088/0256-307X/27/10/108101
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115498]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Ren, K,Rao, F,song, zt,et al. Si3.5Sb2Te3 Phase Change Material for Low-Power Phase Change Memory Application[J]. CHINESE PHYSICS LETTERS,2010,27(10):108101.
APA	Ren, K.,Rao, F.,song, zt.,Wu, LC.,Zhou, XL.,...&Chen, BM.(2010).Si3.5Sb2Te3 Phase Change Material for Low-Power Phase Change Memory Application.CHINESE PHYSICS LETTERS,27(10),108101.
MLA	Ren, K,et al."Si3.5Sb2Te3 Phase Change Material for Low-Power Phase Change Memory Application".CHINESE PHYSICS LETTERS 27.10(2010):108101.