Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming

	Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming
	Chen, YF ; song, zt(重点实验室） ; Chen, XG ; Liu, B(重点实验室） ; Xu, C ; Feng, GM ; Wang, LY ; Zhong, M ; Feng, SL(重点实验室）
刊名	CHINESE PHYSICS LETTERS
	2010
卷号	27 期号:10 页码:107302
关键词	Physics Multidisciplinary
ISSN号	0256-307X
学科主题	Physics
收录类别	SCI
原文出处	10.1088/0256-307X/27/10/107302
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115484]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Chen, YF,song, zt,Chen, XG,et al. Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming[J]. CHINESE PHYSICS LETTERS,2010,27(10):107302.
APA	Chen, YF.,song, zt.,Chen, XG.,Liu, B.,Xu, C.,...&Feng, SL.(2010).Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming.CHINESE PHYSICS LETTERS,27(10),107302.
MLA	Chen, YF,et al."Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming".CHINESE PHYSICS LETTERS 27.10(2010):107302.