The effect of annealing and chemical mechanical polishing on Ge2Sb2Te5 phase change memory

	The effect of annealing and chemical mechanical polishing on Ge2Sb2Te5 phase change memory
	Zhong, M ; song, zt(重点实验室） ; Liu, B(重点实验室） ; Chen, YF ; Gong, YF ; Rao, F ; Feng, SL(重点实验室） ; Zhang, FX ; Xiang, YH
刊名	SCRIPTA MATERIALIA
	2009
卷号	60 期号:11 页码:957-959
关键词	Nanoscience & Nanotechnology Materials Science Multidisciplinary Metallurgy & Metallurgical Engineering
ISSN号	1359-6462
学科主题	Science & Technology - Other Topics; Materials Science; Metallurgy & Metallurgical Engineering
收录类别	SCI
原文出处	10.1016/j.scriptamat.2009.02.023
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115449]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Zhong, M,song, zt,Liu, B,et al. The effect of annealing and chemical mechanical polishing on Ge2Sb2Te5 phase change memory[J]. SCRIPTA MATERIALIA,2009,60(11):957-959.
APA	Zhong, M.,song, zt.,Liu, B.,Chen, YF.,Gong, YF.,...&Xiang, YH.(2009).The effect of annealing and chemical mechanical polishing on Ge2Sb2Te5 phase change memory.SCRIPTA MATERIALIA,60(11),957-959.
MLA	Zhong, M,et al."The effect of annealing and chemical mechanical polishing on Ge2Sb2Te5 phase change memory".SCRIPTA MATERIALIA 60.11(2009):957-959.