Origin and evolution of photoluminescence from Si nanocrystals embedded in a SiO2 matrix
Wang XX ; Zhang JG ; Ding L ; Cheng BW ; Ge WK ; Yu JZ ; Wang QM
刊名physical review b
2005
卷号72期号:19页码:art.no.195313
关键词SILICON NANOCRYSTALS
ISSN号1098-0121
通讯作者wang, xx, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: wangxiaoxin@red.semi.ac.cn
中文摘要a detailed analysis of the photoluminescence (pl) from si nanocrystals (ncs) embedded in a silicon-rich sio2 matrix is reported. the pl spectra consist of three gaussian bands (peaks a,b, and c), originated from the quantum confinement effect of si ncs, the interface state effect between a si nc and a sio2 matrix, and the localized state transitions of amorphous si clusters, respectively. the size and the surface chemistry of si ncs are two major factors affecting the transition of the dominant pl origin from the quantum confinement effect to the interface state recombination. the larger the size of si ncs and the higher the interface state density (in particular, si = o bonds), the more beneficial for the interface state recombination process to surpass the quantum confinement process, in good agreement with qin's prediction in qin and li [phys. rev. b 68, 85309 (2003)]. the realistic model of si ncs embedded in a sio2 matrix provides a firm theoretical support to explain the transition trend.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-03-17
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/8384]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Wang XX,Zhang JG,Ding L,et al. Origin and evolution of photoluminescence from Si nanocrystals embedded in a SiO2 matrix[J]. physical review b,2005,72(19):art.no.195313.
APA Wang XX.,Zhang JG.,Ding L.,Cheng BW.,Ge WK.,...&Wang QM.(2005).Origin and evolution of photoluminescence from Si nanocrystals embedded in a SiO2 matrix.physical review b,72(19),art.no.195313.
MLA Wang XX,et al."Origin and evolution of photoluminescence from Si nanocrystals embedded in a SiO2 matrix".physical review b 72.19(2005):art.no.195313.
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