Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation

	Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation
	Lei, BL ; Yu, GH ; Ye, HH ; Meng, S ; Wang, XZ ; Lin, C ; Qi, M ; Li, A ; Nouet, G ; Ruterana, P ; Chen, J
刊名	THIN SOLID FILMS
	2008
卷号	516 期号:12 页码:3772-3775
关键词	Materials Science Materials Science Physics Physics Multidisciplinary Coatings & Films Applied Condensed Matter
ISSN号	0040-6090
学科主题	Materials Science; Physics
收录类别	SCI
原文出处	10.1016/j.tsf.2007.06.101
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115337]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Lei, BL,Yu, GH,Ye, HH,et al. Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation[J]. THIN SOLID FILMS,2008,516(12):3772-3775.
APA	Lei, BL.,Yu, GH.,Ye, HH.,Meng, S.,Wang, XZ.,...&Chen, J.(2008).Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation.THIN SOLID FILMS,516(12),3772-3775.
MLA	Lei, BL,et al."Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation".THIN SOLID FILMS 516.12(2008):3772-3775.