Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE

	Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE
	Wang, K ; Gu, Y ; Fang, X ; Zhou, L ; Li, C ; Li, HSBY ; Zhang, YG（重点实验室）
刊名	JOURNAL OF INFRARED AND MILLIMETER WAVES
	2012
卷号	31 期号:5 页码:385-+
关键词	Optics
ISSN号	1001-9014
学科主题	Optics
收录类别	SCI
原文出处	10.3724/SP.J.1010.2012.00385
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115314]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Wang, K,Gu, Y,Fang, X,et al. Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES,2012,31(5):385-+.
APA	Wang, K.,Gu, Y.,Fang, X.,Zhou, L.,Li, C.,...&Zhang, YG.(2012).Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE.JOURNAL OF INFRARED AND MILLIMETER WAVES,31(5),385-+.
MLA	Wang, K,et al."Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE".JOURNAL OF INFRARED AND MILLIMETER WAVES 31.5(2012):385-+.