(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit | |
Song SL ; Chen NF ; Zhou JP ; Li YL ; Chai CL ; Yang SY ; Liu ZK | |
刊名 | journal of crystal growth
![]() |
2004 | |
卷号 | 260期号:3-4页码:451-455 |
关键词 | auger electron spectroscopy |
ISSN号 | 0022-0248 |
通讯作者 | song, sl, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. |
中文摘要 | (ga, gd, as) film was fabricated by the mass-analyzed dual ion-beam epitaxy system with the energy of 1000 ev at room temperature. there was no new peak found except gaas substrate peaks (0 0 2) and (0 0 4) by x-ray diffraction. rocking curves were measured for symmetric (0 0 4) reflections to further yield the lattice mismatch information by employing double-crystal x-ray diffraction. the element distributions vary so much due to the ion dose difference from aes depth profiles. the sample surface morphology indicates oxidizing layer roughness is also relative to the gd ion dose, which leads to islandlike feature appearing on the high-dose sample. one sample shows ferromagnetic behavior at room temperature. (c) 2003 elsevier b.v. all rights reserved. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-09 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/8230] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Song SL,Chen NF,Zhou JP,et al. (Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit[J]. journal of crystal growth,2004,260(3-4):451-455. |
APA | Song SL.,Chen NF.,Zhou JP.,Li YL.,Chai CL.,...&Liu ZK.(2004).(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit.journal of crystal growth,260(3-4),451-455. |
MLA | Song SL,et al."(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit".journal of crystal growth 260.3-4(2004):451-455. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论