Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows

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	Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows
	Li DB
刊名	journal of crystal growth
	2004
卷号	260 期号:3-4 页码:388-393
关键词	triple-axis X-ray diffraction
ISSN号	0022-0248
通讯作者	liu, jp, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china.
中文摘要	alingan quaternary epilayers have been grown with various tmga flows by metalorganic chemical vapor deposition to investigate the influence of growth rate on the structural and optical properties. triple-axis x-ray diffraction measurements show alingan epilayers have good crystalline quality. photolummescence (pl) measurements show that the emission intensity of alingan epilayers is twenty times stronger than that of algan epilayer with comparable al content. v-shaped pits are observed at the surface of alingan epilayers by atomic force microscopy (afm) and transmission electron microscopy (tem). high growth rate leads to increased density and size of v-shaped pits, but crystalline quality is not degraded. (c) 2003 elsevier b.v. all rights reserved.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8228]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li DB. Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows[J]. journal of crystal growth,2004,260(3-4):388-393.
APA	Li DB.(2004).Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows.journal of crystal growth,260(3-4),388-393.
MLA	Li DB."Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows".journal of crystal growth 260.3-4(2004):388-393.