InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy

	InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy
	Teng, T ; Ai, LK ; Xu, AH ; Sun, H ; Zhu, FY ; Qi, M
刊名	JOURNAL OF CRYSTAL GROWTH
	2011
卷号	323 期号:1 页码:525-528
关键词	Crystallography Materials Science Physics Multidisciplinary Applied
ISSN号	0022-0248
学科主题	Crystallography; Materials Science; Physics
收录类别	SCI
原文出处	10.1016/j.jcrysgro.2010.12.080
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115272]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Teng, T,Ai, LK,Xu, AH,et al. InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2011,323(1):525-528.
APA	Teng, T,Ai, LK,Xu, AH,Sun, H,Zhu, FY,&Qi, M.(2011).InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,323(1),525-528.
MLA	Teng, T,et al."InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 323.1(2011):525-528.