Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy

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	Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy
	Chen CL ; Chen NF ; Liu LF ; Li YL ; Wu JL
刊名	journal of crystal growth
	2004
卷号	260 期号:1-2 页码:50-53
关键词	X-ray diffraction
ISSN号	0022-0248
通讯作者	chen, cl, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china.
中文摘要	the gal(1-x)mn(x)sb epilayer was prepared on the n-type gasb substrate by liquid phase epitaxy. the structure of the gal(1-x)mn(x)sb epilayer was analyzed by double-crystal x-ray diffraction. from the difference of the lattice constant between the gasb substrate and the ga1-xmnxsb epilayer, the mn content in the ga1-xmnxsb epilayer were calculated as x = 0.016. the elemental composition of ga1-xmnxsb epilayer was analyzed by energy dispersive spectrometer. the carrier concentration was obtained by hall measurement. the hole concentration in the ga1-xmnxsb epilayer is 4.06 x 10(19)cm(-3). it indicates that most of the mn atoms in ga1-xmnxsb take the site of ga, and play a role of acceptors. the current-voltage curve of the ga1-xmnxsb/gasb heterostructure was measured, and the rectifying effect is obvious. (c) 2003 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8220]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen CL,Chen NF,Liu LF,et al. Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy[J]. journal of crystal growth,2004,260(1-2):50-53.
APA	Chen CL,Chen NF,Liu LF,Li YL,&Wu JL.(2004).Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy.journal of crystal growth,260(1-2),50-53.
MLA	Chen CL,et al."Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy".journal of crystal growth 260.1-2(2004):50-53.