Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface

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	Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface
	Huang JS ; Chen Z ; Luo XD ; Xu ZY ; Ge WK
刊名	journal of crystal growth
	2004
卷号	260 期号:1-2 页码:13-17
关键词	atomic force microscopy
ISSN号	0022-0248
通讯作者	huang, js, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要	we have measured photoluminescence (pl) and time-resolve photoluminescence (trpl) from ingan/gan quantum dots (qds) grown on passivated gan surfaces by metalorganic chemical vapor deposition (mocvd). strong pl emission was observed from the qds structure even at room temperature. by comparing the pl and trpl dependence on temperature, a significant difference between the qd and wetting layer emissions was revealed. the qd emission is characterized by a strong exciton localization effect, which leads to a larger thermal activation energy, a nearly constant radiative lifetime independent of temperature and an unusual temperature behavior of the pl peak energy. (c) 2003 elsevier b.v. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8216]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Huang JS,Chen Z,Luo XD,et al. Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface[J]. journal of crystal growth,2004,260(1-2):13-17.
APA	Huang JS,Chen Z,Luo XD,Xu ZY,&Ge WK.(2004).Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface.journal of crystal growth,260(1-2),13-17.
MLA	Huang JS,et al."Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface".journal of crystal growth 260.1-2(2004):13-17.