Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment

	Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment
	Xu, DW ; Cheng, XH ; Zhang, YW ; Wang, ZJ ; Xia, C ; Cao, D ; Yu, YH ; Shen, DS
刊名	MICROELECTRONIC ENGINEERING
	2012
卷号	93 页码:15-18
关键词	Engineering Physics Electrical & Electronic Nanoscience & Nanotechnology Applied Optics
ISSN号	0167-9317
学科主题	Engineering; Science & Technology - Other Topics; Optics; Physics
收录类别	SCI
原文出处	10.1016/j.mee.2011.11.017
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115150]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Xu, DW,Cheng, XH,Zhang, YW,et al. Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment[J]. MICROELECTRONIC ENGINEERING,2012,93:15-18.
APA	Xu, DW.,Cheng, XH.,Zhang, YW.,Wang, ZJ.,Xia, C.,...&Shen, DS.(2012).Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment.MICROELECTRONIC ENGINEERING,93,15-18.
MLA	Xu, DW,et al."Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment".MICROELECTRONIC ENGINEERING 93(2012):15-18.