Demonstration of Super-Collimation in SOI Photonic Crystal Fabricated by 0.13 mu m CMOS Technology

	Demonstration of Super-Collimation in SOI Photonic Crystal Fabricated by 0.13 mu m CMOS Technology
	Wu, AM ; Yang, ZF ; Lin, XL ; Jiang, XY（重点实验室） ; Gan, FW（重点实验室） ; Zhang, MA ; Wang, X（重点实验室） ; Zou, SC（重点实验室）
刊名	INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2
	2010
期号	0 页码:1319-1320
关键词	Engineering Electrical & Electronic Nanoscience & Nanotechnology
学科主题	Engineering; Science & Technology - Other Topics
收录类别	SCI
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115106]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Wu, AM,Yang, ZF,Lin, XL,et al. Demonstration of Super-Collimation in SOI Photonic Crystal Fabricated by 0.13 mu m CMOS Technology[J]. INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2,2010(0):1319-1320.
APA	Wu, AM.,Yang, ZF.,Lin, XL.,Jiang, XY.,Gan, FW.,...&Zou, SC.(2010).Demonstration of Super-Collimation in SOI Photonic Crystal Fabricated by 0.13 mu m CMOS Technology.INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2(0),1319-1320.
MLA	Wu, AM,et al."Demonstration of Super-Collimation in SOI Photonic Crystal Fabricated by 0.13 mu m CMOS Technology".INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 .0(2010):1319-1320.