Wide-band polarization-insensitive high-output-power semiconductor optical amplifier based on thin tensile-strained bulk InGaAs

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	Wide-band polarization-insensitive high-output-power semiconductor optical amplifier based on thin tensile-strained bulk InGaAs
	Wang, SR ; Liu, ZH ; Wang, W ; Zhu, HL ; Zhang, RY ; Zhou, F ; Wang, LF ; Ding, Y
刊名	chinese physics letters
	2004
卷号	21 期号:2 页码:310-312
关键词	GAIN
ISSN号	0256-307x
通讯作者	wang, sr, chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china. 电子邮箱地址: shrw@red.semi.ac.cn
中文摘要	a polarization-insensitive semiconductor optical amplifier (soa) with a very thin active tensile-strained ingaas bulk has been fabricated. the polarization sensitivity of the amplifier gain is less than 1 db over both the entire range of driving current and the 3 db optical bandwidth of more than 80 nm. for optical signals of 1550 nm wavelength, the soa exhibits a high saturation output power +7.6 dbm together with a low noise figure of 7.5 db, fibre-to-fibre gain of 11.5 db, and low polarization sensitivity of 0.5 db. additionally, at the gain peak 1520 nm, the fibre-to-fibre gain is measured to be 14.1 db.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8182]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang, SR,Liu, ZH,Wang, W,et al. Wide-band polarization-insensitive high-output-power semiconductor optical amplifier based on thin tensile-strained bulk InGaAs[J]. chinese physics letters,2004,21(2):310-312.
APA	Wang, SR.,Liu, ZH.,Wang, W.,Zhu, HL.,Zhang, RY.,...&Ding, Y.(2004).Wide-band polarization-insensitive high-output-power semiconductor optical amplifier based on thin tensile-strained bulk InGaAs.chinese physics letters,21(2),310-312.
MLA	Wang, SR,et al."Wide-band polarization-insensitive high-output-power semiconductor optical amplifier based on thin tensile-strained bulk InGaAs".chinese physics letters 21.2(2004):310-312.