Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy

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	Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy
	Jiang DS
刊名	applied physics letters
	2004
卷号	84 期号:11 页码:1859-1861
关键词	1.3 MU-M
ISSN号	0003-6951
通讯作者	ramsteiner, m, paul drude inst festkorperelekt, hausvogteipl 5-7, d-10117 berlin, germany. 电子邮箱地址: mer@pdi-berlin.de
中文摘要	nitrogen-related defects in diluted ga(as,n) have been detected by raman scattering in resonance with the localized e+ transition. these defects are attributed to local vibrational modes of nitrogen dimers on ga- and as-lattice sites. rapid thermal annealing under appropriate conditions is found to be able to remove the nitrogen dimers. the required minimum annealing temperature coincides with the threshold-like onset of strong, near-band-gap photoluminescence. this finding suggests that the nitrogen dimers are connected with nonradiative recombination centers. (c) 2004 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8154]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jiang DS. Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy[J]. applied physics letters,2004,84(11):1859-1861.
APA	Jiang DS.(2004).Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy.applied physics letters,84(11),1859-1861.
MLA	Jiang DS."Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy".applied physics letters 84.11(2004):1859-1861.