Passive Q-switched mode locking of double-clading Yb : fiber laser with ion-implanted GaAs

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	Passive Q-switched mode locking of double-clading Yb : fiber laser with ion-implanted GaAs
	Wang YG ; Ma XY ; Fu SG ; Fan WD ; Li Q
刊名	acta physica sinica
	2004
卷号	53 期号:6 页码:1810-1814
关键词	ion-implanted GaAs
ISSN号	1000-3290
通讯作者	wang, yg, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要	we report the technique of the ion-implanted semi-insulating gaas wafer used for passive q-switched mode locking in double-cladding yb:fiber laser. the wafer was implanted with 400-kev energy, 10(16)/cm(2) dose as+ ions, and was annealed at 600degreesc for 20 min. at the pump power of 5w, we achieved output power of 200mw. the repetition rate of envelope of q-switched mode locking is 50-khz with a fwhm envelope of 4mus. the repetition rate of mode locked pulse train was found to be 15-mhz. this is the first report of such a kind of laser to the best of our knowledge.
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8060]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang YG,Ma XY,Fu SG,et al. Passive Q-switched mode locking of double-clading Yb : fiber laser with ion-implanted GaAs[J]. acta physica sinica,2004,53(6):1810-1814.
APA	Wang YG,Ma XY,Fu SG,Fan WD,&Li Q.(2004).Passive Q-switched mode locking of double-clading Yb : fiber laser with ion-implanted GaAs.acta physica sinica,53(6),1810-1814.
MLA	Wang YG,et al."Passive Q-switched mode locking of double-clading Yb : fiber laser with ion-implanted GaAs".acta physica sinica 53.6(2004):1810-1814.