Characterization of polymorphous silicon thin film and solar cells

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	Characterization of polymorphous silicon thin film and solar cells
	Zhang, S ; Xu, Y ; Liao, X ; Martins, R ; Fortunato, E ; Hu, Z ; Kong, G
刊名	advanced materials forum ii
	2004
卷号	455-456 期号:0 页码:77-80
关键词	polymorphous silicon thin film solar cell
ISSN号	0255-5476
通讯作者	zhang, s, chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china. 电子邮箱地址: sz@uninova.pt
中文摘要	polymorphous silicon (pm-si:h) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. comparing to the conventional amorphous silicon (a-si:h), the pm-si:h has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. it can be found from raman spectra that there is a notable improvement in the medium range order. there are a blue shift for the stretching mode of ir spectra and a red shift for the wagging mode. the shifts are attributed to the variation of the microstructure. by using pm-si:h film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (am1.5, 100mw/cm(2)) at room temperature (t-r).
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8052]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang, S,Xu, Y,Liao, X,et al. Characterization of polymorphous silicon thin film and solar cells[J]. advanced materials forum ii,2004,455-456(0):77-80.
APA	Zhang, S.,Xu, Y.,Liao, X.,Martins, R.,Fortunato, E.,...&Kong, G.(2004).Characterization of polymorphous silicon thin film and solar cells.advanced materials forum ii,455-456(0),77-80.
MLA	Zhang, S,et al."Characterization of polymorphous silicon thin film and solar cells".advanced materials forum ii 455-456.0(2004):77-80.