Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD

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	Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD
	Jin RQ ; Liu JP ; Zhang JC ; Yang H
刊名	journal of crystal growth
	2004
卷号	268 期号:1-2 页码:35-40
关键词	crystal morphology
ISSN号	0022-0248
通讯作者	jin, rq, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: rqjin@red.semi.ac.cn
中文摘要	we have studied the effect of low-temperature-deposited (lt) and high-temperature-deposited (fit) aln interlayer with various thickness on algan film grown on gan using c-plane sapphire as substrate. all the al0.25ga0.75n films thicker than 1 mum with lt-aln interlayer or with ht-aln interlayer were free of cracks, however, their surfaces were different: the al0.25ga0.75n films with lt-aln interlayer showed smooth surface, while those with ht-aln interlayer exhibit rough surface morphology. the results of x-ray double crystal diffraction and rutherford backscattering showed that all of the algan films were under compressive strain in the parallel direction. the compressive strain resulted from the effect of interlayer-induced stress relieving and the thermal mismatch for the samples with lt-aln interlayer, and it was due to the thermal mismatch between algan and the underlying layers for those with ht-aln interlayer. (c) 2004 elsevier b.v. all rights reserved.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8018]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin RQ,Liu JP,Zhang JC,et al. Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD[J]. journal of crystal growth,2004,268(1-2):35-40.
APA	Jin RQ,Liu JP,Zhang JC,&Yang H.(2004).Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD.journal of crystal growth,268(1-2),35-40.
MLA	Jin RQ,et al."Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD".journal of crystal growth 268.1-2(2004):35-40.