The influence of AlN buffer layer thickness on the properties of GaN epilayer

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	The influence of AlN buffer layer thickness on the properties of GaN epilayer
	Zhao DG
刊名	journal of crystal growth
	2004
卷号	268 期号:1-2 页码:24-29
关键词	buffer layer
ISSN号	0022-0248
通讯作者	zhang, jc, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jczhang@red.semi.ac.cn
中文摘要	the influence of low-temperature aln buffer layer thickness on gan epilayer was investigated by triple-axis x-ray diffraction (xrd) and photoluminescence measurements. a method was proposed to measure the screw and edge dislocation densities by xrd. it was found that the buffer layer thickness was a key parameter to affect the quality of gan epilayer and an appropriate thickness resulted in the best structural and optical properties except the lateral grain size. after the thickness exceeding the appropriate value, the compressive stress in the epilayer decreased as the thickness increased, which led to the redshift of the near-band edge luminescence. the experimental results showed the buffer layer thickness had more influence on edge dislocation than screw type and the former was perhaps the main source of the yellow band. (c) 2004 elsevier b.v. all rights reserved.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8016]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao DG. The influence of AlN buffer layer thickness on the properties of GaN epilayer[J]. journal of crystal growth,2004,268(1-2):24-29.
APA	Zhao DG.(2004).The influence of AlN buffer layer thickness on the properties of GaN epilayer.journal of crystal growth,268(1-2),24-29.
MLA	Zhao DG."The influence of AlN buffer layer thickness on the properties of GaN epilayer".journal of crystal growth 268.1-2(2004):24-29.