Study of infrared luminescence from Er-implanted GaN films

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	Study of infrared luminescence from Er-implanted GaN films
	Chen WD ; Song SF ; Zhu JJ ; Wang XL ; Chen CY ; Hsu CC
刊名	journal of crystal growth
	2004
卷号	268 期号:3-4 页码:466-469
关键词	doping
ISSN号	0022-0248
通讯作者	chen, wd, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wdchen@red.semi.ac.cn
中文摘要	in this study, we report the dependences of infrared luminescence properties of er-implanted gan thin films (gan:er) on the kinds of substrates used to grow gan, the growth techniques of gan, the implantation parameters and annealing procedures. the experimental results showed that the photoluminescence (pl) intensity at 1.54 mum was severely influenced by different kinds of substrates. the integrated pl peak intensity from gan:er /al2o3 (00001) was three and five times stronger than that from gan:er /si (111) grown by molecular beam epitaxy (mbe) and by metalorganic chemical vapor deposition (mocvd), respectively. the pl spectra observed from gan:er/al2o3 (0001) grown by mocvd and by mbe displayed a similar feature, but those samples grown by mocvd exhibited a stronger 1.54 mum pl. it was also found that there was a strong correlation between the pl intensity with ion implantation parameters and annealing procedures. ion implantation induced damage in host material could be only partly recovered by an appropriate annealing temperature procedure. the thermal quenching of pl from 15 to 300 k was also estimated. in comparison with the integrated pl intensity at 15 k, it is reduced by only about 30 % when going up to 300 k for gan:er/al2o3 sample grown by mocvd. our results also show that the strongest pl intensity comes from gan:er grown on al2o3 substrate by mocvd. (c) 2004 elsevier b.v. all rights reserved.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8002]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen WD,Song SF,Zhu JJ,et al. Study of infrared luminescence from Er-implanted GaN films[J]. journal of crystal growth,2004,268(3-4):466-469.
APA	Chen WD,Song SF,Zhu JJ,Wang XL,Chen CY,&Hsu CC.(2004).Study of infrared luminescence from Er-implanted GaN films.journal of crystal growth,268(3-4),466-469.
MLA	Chen WD,et al."Study of infrared luminescence from Er-implanted GaN films".journal of crystal growth 268.3-4(2004):466-469.