Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots

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	Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots
	Xu B; Ye XL; Jin P; Li CM
刊名	applied physics letters
	2004
卷号	85 期号:14 页码:2791-2793
关键词	ELECTRON-HOLE ALIGNMENT
ISSN号	0003-6951
通讯作者	jin, p, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: pengjin@red.semi.ac.cn
中文摘要	quantum-confined stark effect and built-in dipole moment in self-assembled inas/gaas quantum dots (qds), which are grown at relative low temperature (460degreesc) and embedded in gaas p-i-n structure, have been studied by dc-biased electroreflectance. franz-keldysh oscillations from the undoped gaas layer are used to determine the electric field under various bias voltages. stark shift of -34 mev for the ground-state interband transition of the qds is observed when the electric field increases from 105 to 308 kv/cm. the separation of the electron and hole states in the growth direction of 0.4 nm, corresponding to the built-in dipole moment of 6.4x10(-29) c m, is determined. it is found that the electron state lies above that of the hole, which is the same as that predicted by theoretical calculations for ideal pyramidal inas qds. (c) 2004 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7942]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B,Ye XL,Jin P,et al. Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots[J]. applied physics letters,2004,85(14):2791-2793.
APA	Xu B,Ye XL,Jin P,&Li CM.(2004).Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots.applied physics letters,85(14),2791-2793.
MLA	Xu B,et al."Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots".applied physics letters 85.14(2004):2791-2793.