A new p-n structure ultraviolet photodetector with p(-)-GaN active region

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	A new p-n structure ultraviolet photodetector with p(-)-GaN active region
	Zhou M (Zhou Mei) ; Zhao DG (Zhao De-Gang)
刊名	acta physica sinica
	2009
卷号	58 期号:10 页码:7255-7260
关键词	p menus type GaN
ISSN号	1000-3290
通讯作者	zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: dgzhao@red.semi.ac.cn
中文摘要	a new ultraviolet photodetector of employing p menus type gan (p(-)-gan) as the active layer is proposed. it is easy to obtain the p(-)-gan layer with low carrier concentration. as a result, the depletion region can be increased and the quantum efficiency can be improved. the influence of some structure parameters on the performance of the new device is investigated. through the simulation calculation, it is found that the quantum efficiency increases with the decrease of the barrier height between the metal electrode and the p(-)-gan layer, and it is also found that the quantum efficiency can be improved by reducing the thickness of the p(-)-gan layer. to fabricate the new photodetector with high performance, we should employ thin p(-)-gan layer as the active layer and reduce the schottky barrier height.
学科主题	光电子学
收录类别	SCI
资助信息	national natural science foundation of china 60776047 ministry of education of china 708014 project supported by the national natural science foundation of china (grant no. 60776047) and the cultivation fund of the key scientific and technical innovation project, ministry of education of china (grant no.708014).
语种	中文
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7581]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhou M ,Zhao DG . A new p-n structure ultraviolet photodetector with p(-)-GaN active region[J]. acta physica sinica,2009,58(10):7255-7260.
APA	Zhou M ,&Zhao DG .(2009).A new p-n structure ultraviolet photodetector with p(-)-GaN active region.acta physica sinica,58(10),7255-7260.
MLA	Zhou M ,et al."A new p-n structure ultraviolet photodetector with p(-)-GaN active region".acta physica sinica 58.10(2009):7255-7260.